t4 - lds - 0217, rev . 1 (112019) ?2011 microsemi corporation page 1 of 5 1n6492 available on commercial versions h ermetic schottky r ectifiers 4 amp, 45 volts qualified per mil - prf - 19500/567 qualified levels : jan, jantx, and jantxv description the 1n6492 hermetic schottky rectifier is military qualified and ideally suited for output rectifiers and catch diodes in high efficiency, low voltage and high - reliability switching power supplies. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. to - 205af (to - 39) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 6492 . ? rugged hermetic package, no pressure contacts . ? jan, jantx and jantxv qualification s are also available per mil - prf - 19500/567. ? rohs compliant versions available (commercial grade only) . applications / benefits ? extremely l ow vf and ir. ? high s urge c apability . ? low recovered charge. ? esd to class 3a per mil - std - 750 m ethod 1020. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +175 o c thermal resistance junction - to - ambient r ? ja 175 o c /w thermal resistance junction - to - case r ? jc 12 o c /w dc blocking volta ge v r 45 v working peak reverse voltage v rwm 45 v repetitive peak inverse voltage v rrm 45 v non - repetitive peak inverse voltage v rsm 54 v maximum average dc output current , t c = + 100 o c (2) i o 3.6 a average forward current , t a = + 25 o c i f1( av ) 1.2 a average forward current (50% duty cycle), t c = + 100 o c (1) i f1( av ) 4 a non - repetitive sinusoidal surge current i fsm 80 a notes : 1. average current with a 50 percent duty cycle square wave including reverse voltage amplitude equal to the magnitu de of full rated v rwm . derate linearly at 114 ma/ c for t c > +100 c (to 0 at t c = +135 c); if v rwm = 20, derate i f (av) at 62 ma/c, to 0 at t c = +165 c. 2. average current with an applied sine wave including reverse voltage equal to the magnitude o f full rated v rwm . derate linearly at 103 ma dc/c for t c > +100 c; if v rwm = 20, derate at 55 ma/c. downloaded from: http:///
t4 - lds - 0217, rev . 1 (112019) ?2011 microsemi corporation page 2 of 5 1n6492 mechanical and packaging ? case: metal to - 205af (to - 39). ? terminals: lead/ t in or rohs compliant matte/t in plating (commercial grade only). ? marking: part number and date code. ? polarity: terminal 1 = anode, terminal 2 = open, terminal 3 = cathode (case). ? weight: 1.064 g rams . ? see p ackage d imensions on last page. part nomenclature jan 1n6492 (e3) reliabi lity level jan = jan level jant x = jant x level jantx v = jantx v level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs compliant ( available on commercial gr ade only ) blank = non - rohs compliant symbols & definitions symbol definition c t total capacitance: the total capacitance in pf at a frequency of 1 mhz and specified voltage . i f forward current: the forward current dc value, no alternating compon ent. i f sm maximum forward surge current: the forward current, surge peak or rated forward surge current. i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz sin e - wave input and a 180 degree conduction angle. i rm maximum reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. v fm maximum forward voltage: the maximum forward voltage the device will exhibit at a specified current. v r reverse voltage: the reverse voltage dc value, no alternating component. v rrm repetitive peak reverse voltage: the peak reverse voltage including all repetitive transien t voltages but excluding all non - repetitive transient voltages. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating t emperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. electrical characteristics @ 25 o c unless specified otherwise. part number v fm1 i fm = 4 a (pk) v fm2 i fm = 2 a (pk) i rm v rm = 45 v (p k) t a = +125 c i rm v rm = 45 v (p k) t a = +25 c c t v r = 5 v dc , .01 f 1 mhz, v sig = 15 mv(p -p) v (pk) v (pk) ma ( pk) ma ( pk) pf 1n 6492 .68 .56 20 2.0 450 downloaded from: http:///
t4 - lds - 0217, rev . 1 (112019) ?2011 microsemi corporation page 3 of 5 1n6492 graphs t ime (s) figure 1 C maximum thermal impedance v r C reverse voltage (v) vf C forward voltage (v) figure 2 C typical junction capacita nce vs. figure 3 C typical forward current vs. reverse voltage forward voltage t heta ( o c/w) j unction capacitance (pf) i f C forward current downloaded from: http:///
t4 - lds - 0217, rev . 1 (112019) ?2011 microsemi corporation page 4 of 5 1n6492 graphs (continued) t a C ambient temperature ( o c) v r C reverse voltage (v) figure 4 C output current vs. ambient temperature figure 5 C typical reverse current vs . 50% duty cycle application (i f(avg) and v rrm ) reverse voltage i f(avg) C output current (a) i r C reverse current downloaded from: http:///
t4 - lds - 0217, rev . 1 (112019) ?2011 microsemi corporation page 5 of 5 1n6492 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. beyond radius (r) maximum, tw shall be held for a minimum length of .011 inch (0.279 m m). 4. dimension tl measured from maximum hd. 5. outline in this zone is not controlled. 6. dimension cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controll ed for automatic handling. 7. leads at gauge plane .054 +.001, - .000 inch (1.37 +0.03, - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relativ e to tab at mmc. the device may be measured by direct methods. 8. lu applies between l1 and l2. ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 9. all three leads. 10. radius (r) applies to both inside corners of tab. 11. cathode is electrically connected to the case. 12. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions symbol inches millimeters note min max min max cd .305 .335 7.75 8.51 ch .160 .180 4.07 4.57 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 7 ld .0 16 .021 0.41 0.53 8, 9 ll .500 .750 12.7 19.05 8, 9 lu .016 .019 0.41 0.48 8, 9 l 1 .050 1.27 8, 9 l 2 .250 6.35 8, 9 p .100 2.54 6 q .040 1.02 5 tl .029 .045 0.74 1.14 tw .028 .034 0.72 0 .86 r .010 0.25 4 10 45 tp 45 tp 7 term 1 anode term 2 open (no connection) term 3 cathode (case) 1 3 downloaded from: http:///
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